 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2754GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The PA2754GR is Dual N-channel MOS Field Effect Transistor designed for Li-ion battery protection circuit and power management application. 8 PACKAGE DRAWING (Unit: mm) 5 1 : Source 1 2 : Gate 1 7, 8: Drain 1 3 : Source 2 4 : Gate 2 5, 6: Drain 2 6.0 0.3 4.4 +0.10 -0.05 FEATURES * Dual chip type * Low on-state resistance RDS(on)1 = 14.5 m MAX. (VGS = 4.5 V, ID = 5.5 A) RDS(on)2 = 15.0 m MAX. (VGS = 4.0 V, ID = 5.5 A) RDS(on)4 = 18.6 m MAX. (VGS = 2.5 V, ID = 5.5 A) * Low Ciss: Ciss = 1940 pF TYP. (VDS = 10 V, VGS = 0 V) * Built-in G-S protection diode * Small and surface mount package (Power SOP8) 1 4 5.37 MAX. 1.44 0.8 1.8 MAX. 0.15 0.05 MIN. 0.5 0.2 0.10 ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 1.27 0.78 MAX. 0.40 +0.10 -0.05 0.12 M PA2754GR ABSOLUTE MAXIMUM RATINGS (TA = 25C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Note2 Note1 Note2 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg 30 12 11 88 2.0 1.7 150 -55 to +150 11 12.1 V V A A W W C C A mJ Gate Protection Diode Source Gate Drain EQUIVALENT CIRCUIT (1/2 circuit) Drain Current (pulse) Total Power Dissipation (2 units) Total Power Dissipation (1 unit) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note3 Note3 Note2 Body Diode IAS EAS Notes 1. PW 10 s, Duty cycle 1% 2 2. TA = 25C, Mounted on ceramic substrate of 2000 mm x 2.2 mm 3. Starting Tch = 25C, VDD = 15 V, RG = 25 , VGS = 12 0 V Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G15816EJ1V0DS00 (1st edition) Date Published January 2003 NS CP(K) Printed in Japan 2001 PA2754GR ELECTRICAL CHARACTERISTICS (TA = 25C, All terminals are connected.) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note Note SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 RDS(on)4 TEST CONDITIONS VDS = 30 V, VGS = 0 V VGS = 12 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 5.5 A VGS = 4.5 V, ID = 5.5 A VGS = 4.0 V, ID = 5.5 A VGS = 3.1 V, ID = 5.5 A VGS = 2.5 V, ID = 5.5 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 15 V, ID = 5.5 A VGS = 4.5 V RG = 10 MIN. TYP. MAX. 1 10 UNIT A A V S 0.5 8 16 11.5 11.8 12.7 13.9 1940 385 270 21 45 75 30 1.5 Forward Transfer Admittance Drain to Source On-state Resistance Note 14.5 15.0 16.9 18.6 m m m m pF pF pF ns ns ns ns nC nC nC Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 24 V VGS = 4.5 V ID = 11 A IF = 11 A, VGS = 0 V IF = 11 A, VGS = 0 V di/dt = 100 A/s 25 3 10 0.81 47 41 1.2 V ns nC Note Pulsed: PW 350 s, Duty Cycle 2% TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 PG. VGS = 20 0 V 50 TEST CIRCUIT 2 SWITCHING TIME D.U.T. L VDD PG. RG VGS RL VDD VDS 90% 90% 10% 10% VGS Wave Form 0 10% VGS 90% BVDSS IAS ID VDD VDS VGS 0 = 1 s Duty Cycle 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 RL VDD 2 Data Sheet G15816EJ1V0DS PA2754GR TYPICAL CHARACTERISTICS (TA = 25C, All terminals are connected.) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % 2.8 100 80 60 40 20 0 0 25 50 75 100 125 150 175 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT - Total Power Dissipation - W Mounted on ceramic substrate of 2000 mm 2 x 2.2 mm 2 units 2.4 2 1.6 1.2 0.8 0.4 0 0 25 50 1 unit 75 100 125 150 175 TA - Ambient Temperature - C TA - Ambient Temperature - C FORWARD BIAS SAFE OPERATING AREA 1000 RDS(on) Limited (VGS = 4.5 V) ID(pulse) = 88 A PW = 100 s ID - Drain Current - A 100 ID(DC) = 11 A 10 1 ms 30 A 55 A Power Dissipation Limited 10 ms 100 ms DC 1 0.1 1 unit, Single pulse Mounted on ceramic substrate of 2000 mm 2 x 2.2 mm 0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - C/W 100 Rth(ch-A) = 73.5C/W 10 1 1 unit, Single pulse 2 Mounted on ceramic substrate of 2000 mm x 2.2 mm 0.1 100 1m 10 m 100 m PW - Pulse Width - s 1 10 100 Data Sheet G15816EJ1V0DS 3 PA2754GR DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 Pulsed VGS = 4.5 V FORWARD TRANSFER CHARACTERISTICS 100 VDS = 10 V Pulsed ID - Drain Current - A ID - Drain Current - A 80 3.1 V 10 TA = 150C 75C 25C -25C 60 2.5 V 1 40 0.1 20 0.01 0 0 0.4 0.8 1.2 1.6 0.001 0 1 2 3 4 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S 2 100 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VDS = 10 V Pulsed TA = -25C 25C 75C 125C VGS(off) - Gate Cut-off Voltage - V VDS = 10 V ID = 1 mA 1.5 10 1 1 0.5 0 -50 0 50 100 150 0.1 0.01 0.1 1 10 100 Tch - Channel Temperature - C ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - m RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 50 Pulsed VGS = 2.5 V DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 80 Pulsed 40 3.1 V 60 ID = 11 A 5.5 A 30 40 20 4.5 V 20 10 0 0.1 1 10 100 1000 0 0 4 8 12 ID - Drain Current - A VGS - Gate to Source Voltage - V 4 Data Sheet G15816EJ1V0DS PA2754GR RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 25 Pulsed CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 Ciss, Coss, Crss - Capacitance - pF 20 VGS = 2.5 V 3.1 V 4.5 V Ciss 1000 Coss 15 10 100 VGS = 0 V f = 1 MHz Crss 5 0 -50 0 50 100 150 10 0.01 0.1 1 10 100 Tch - Channel Temperature - C VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS 1000 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 40 8 VDS - Drain to Source Voltage - V 30 VDD = 24 V 15 V 6.0 V 6 100 tr td(off) tf td(on) 20 VGS 4 10 10 VDS 2 ID = 11 A 1 0.1 1 10 100 0 0 10 20 30 0 ID - Drain Current - A QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 Pulsed REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 di/dt = 100 A/s VGS = 0 V 10 VGS = 0 V trr - Reverse Recovery Time - ns IF - Diode Forward Current - A 100 1 10 0.1 0.01 0 0.5 1 1.5 2 1 0.1 1 10 100 VF(S-D) - Source to Drain Voltage - V IF - Diode Forward Current - A Data Sheet G15816EJ1V0DS 5 VGS - Gate to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns VDD = 15 V VGS = 4.5 V RG = 10 PA2754GR SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 120 SINGLE AVALANCHE ENERGY DERATING FACTOR VDD = 15 V RG = 25 VGS = 12 0 V IAS 11 A IAS - Single Avalanche Current - A Energy Derating Factor - % 100 80 60 40 20 0 IAS = 11 A 10 EAS = 12.1 mJ 1 VDD = 15 V RG = 25 VGS = 12 0 V Starting Tch = 25C 0.1 0.01 0.1 1 10 25 50 75 100 125 150 L - Inductive Load - mH Starting Tch - Starting Channel Temperature - C 6 Data Sheet G15816EJ1V0DS PA2754GR * The information in this document is current as of January, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1 |
Price & Availability of UPA2754GR
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |